Experiment: Bipolar transistors (115 V 50/60 Hz)

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Objective: Messung der relevanten Kennlinien eines npn Transistors A bipolar transistor is an electronic component composed of three alternating p doped and n doped semiconductor layers called the base the collector and the emitter. Depending on the sequence of the layers the transistor may either be termed npn or pnp. The response of a bipolar transistor may be distinctively described by for example an input characteristic a control characteristic and an output characteristic. In this experiment examples of these are to be measured for an npn transistor displayed on a graph and evaluated.

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